Gate-All-Around FETs: Nanowire and Nanosheet Structure
intechopen.com
Gate-All-Around FETs: Nanowire and Nanosheet Structure
DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (WNW) and thickness of the channels, and nanosheet (NS) FETs having wide width (WNS ...
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