Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
Engineers at the University of California have developed a new data structure and compression technique that enables the ...
Organizations have a wealth of unstructured data that most AI models can’t yet read. Preparing and contextualizing this data ...