Abstract: The measurements of high-frequency dielectric displacement-electric field hysteresis loops show the continuous reduction of the apparent coercive field upon the lateral size shrinkage of TiN ...
Abstract: We have previously studied fatigue and its recovery phenomenon on 64 kbits hafnium-based one-transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) with PVD-TiN (30 ...
Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States Department of Materials Science and Engineering, The University of Texas at ...
Get article recommendations from ACS based on references in your Mendeley library. Pair your accounts.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results