MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.
GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power electronics in consumer electronics, datacenters, industrial motors, appliances, and ...
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