Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Lab architecture used to test 2D semiconductors artificially boosts performance metrics, making it harder to assess whether these materials can truly replace silicon.
This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
The IT industry loves the concept of “innovation,” but many vendors’ hearts largely belong to just the most conventional sorts of wisdom. That adoration takes a number of shapes: Stone Age business ...
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