Technology Co-Optimization of Bitline Routing and Bonding Pathways in Monolithic 3D DRAM Architectures,” was published by ...

MU's DRAM revenue is anticipated to soar 145% year over year in Q2 as AI workloads boost demand for high-performance memory.

With the introduction of AI across the data center and the edge, the demand for memory has never been greater. Micron’s transition to the 1γ DRAM node helps address the key challenges customers are ...

Q2 2026 Management View CEO and senior leadership focused heavily on addressing persistent supply constraints, particularly in NAND and DRAM, while highlighting robust demand from AI-driven data ...

NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...

FOUNTAIN VALLEY, Calif.--(BUSINESS WIRE)--Kingston Technology Company, Inc., a world leader in memory products and technology solutions, today announced it has been ranked top third-party DRAM module ...

Seoul prosecutors have arrested and indicted three former employees of Samsung Electronics for allegedly leaking advanced nanoscale DRAM process technology to China's Changxin Memory Technologies ...

Micron Technology, Inc., has announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer (nm) DRAM process technology. The new process, coupled with Micron’s 6F² technology, ...

South Korean prosecutors have charged ten individuals over an alleged large-scale leak of 10nm-class DRAM process technology from Samsung Electronics to China's leading memory maker ChangXin Memory ...

Micron delivers superior performance and power efficiency to data center, client and mobile platforms with the industry’s first high performance 1γ node BOISE, Idaho, Feb. 25, 2025 (GLOBE NEWSWIRE) -- ...